Publications
Chaoying Gu; Markus P. Benk; Antoine Islegen-Wojdyla; Kenneth A. Goldberg; Laura Waller
Enhanced extreme ultraviolet mask imaging with Fourier ptychographic microscopy Journal Article
In: Journal of Micro/Nanopatterning, Materials, and Metrology, vol. 25, no. 3, pp. 031606, 2026.
Links | BibTeX | Tags: aberration reconstruction, aperture synthesis, computational imaging, extreme ultraviolet, Extreme ultraviolet lithography, Fourier ptychography, Fresnel zoneplates, full-field imaging, Image restoration, Image sharpness, Imaging systems, Light sources and illumination, Microscopes, Nanoimprint lithography, Photomasks, Pupil aberrations, Reconstruction algorithms
@article{10.1117/1.JMM.25.3.031606,
title = {Enhanced extreme ultraviolet mask imaging with Fourier ptychographic microscopy},
author = {Chaoying Gu and Markus P. Benk and Antoine Islegen-Wojdyla and Kenneth A. Goldberg and Laura Waller},
url = {https://doi.org/10.1117/1.JMM.25.3.031606},
doi = {10.1117/1.JMM.25.3.031606},
year = {2026},
date = {2026-01-01},
journal = {Journal of Micro/Nanopatterning, Materials, and Metrology},
volume = {25},
number = {3},
pages = {031606},
publisher = {SPIE},
keywords = {aberration reconstruction, aperture synthesis, computational imaging, extreme ultraviolet, Extreme ultraviolet lithography, Fourier ptychography, Fresnel zoneplates, full-field imaging, Image restoration, Image sharpness, Imaging systems, Light sources and illumination, Microscopes, Nanoimprint lithography, Photomasks, Pupil aberrations, Reconstruction algorithms},
pubstate = {published},
tppubtype = {article}
}
Stuart Sherwin; Isvar Cordova; Ryan Miyakawa; Markus Benk; Laura Waller; Andrew Neureuther; Patrick Naulleau
Picometer sensitivity metrology for EUV absorber phase Journal Article
In: Journal of Micro/Nanopatterning, Materials, and Metrology, vol. 20, no. 3, pp. 1 – 19, 2021.
Links | BibTeX | Tags: attenuated phase-shift mask, Carbon, Contamination, Etching, EUV absorber, extreme ultraviolet, mask three-dimensional, Metrology, Modulation, Multilayers, phase measurement, Phase shift keying, photomask contamination, Reflection, Reflectivity, Reflectometry
@article{10.1117/1.JMM.20.3.031011,
title = {Picometer sensitivity metrology for EUV absorber phase},
author = {Stuart Sherwin and Isvar Cordova and Ryan Miyakawa and Markus Benk and Laura Waller and Andrew Neureuther and Patrick Naulleau},
url = {https://doi.org/10.1117/1.JMM.20.3.031011},
doi = {10.1117/1.JMM.20.3.031011},
year = {2021},
date = {2021-01-01},
journal = {Journal of Micro/Nanopatterning, Materials, and Metrology},
volume = {20},
number = {3},
pages = {1 -- 19},
publisher = {SPIE},
keywords = {attenuated phase-shift mask, Carbon, Contamination, Etching, EUV absorber, extreme ultraviolet, mask three-dimensional, Metrology, Modulation, Multilayers, phase measurement, Phase shift keying, photomask contamination, Reflection, Reflectivity, Reflectometry},
pubstate = {published},
tppubtype = {article}
}